Crystal growth from solutionhttp://piezo.eng.u-toyama.ac.jp/wp-content/uploads/2014/10/P8110011-e1414112632190.jpg
Recrystalization in aqueous solution of triglycine sulfate.
Geissler tube is used as a vacuum gauge by fluorescence.
4-circle X-ray diffractometerhttp://piezo.eng.u-toyama.ac.jp/wp-content/uploads/2014/10/P3010023-e1414113504560.jpg
X-ray diffraction is carried out by orienting sample using three axes. The remaining axis is for orientation of the detector.
Horizontal axis of oscilloscope shows intensity of electric field and the vertical axis is the amount of charge accumulated in the sample by the electric field. The charge is not proportional to the electric field.
Sample for X-ray diffractionhttp://piezo.eng.u-toyama.ac.jp/wp-content/uploads/2014/10/LHS-Xray-sample2-e1414116906368.jpg
Single crystal sample for X-ray diffraction. The shape and size are spherical and 0.3mm. Glass rod for the support is attached to the bottom of the sample.
Titanium oxide thin film prepared by sputteringhttp://piezo.eng.u-toyama.ac.jp/wp-content/uploads/2014/10/SnO2-A-e1414118600650.png
Surface of the titanium oxide thin film (left) and the cross-section (right). Large porosity has advantage for a large surface area.
Titanium oxide tabular nanorods with several hundred nanometers in thickness have grown.
Tungsten trioxide nanoparticleshttp://piezo.eng.u-toyama.ac.jp/wp-content/uploads/2014/10/WO3-A-e1414122617828.png
Particle size changes (600℃ left, 800℃ right) with the heat treatment temperature.
Preparation of thin film by sputteringhttp://piezo.eng.u-toyama.ac.jp/wp-content/uploads/2014/10/DSCN0285-e1414715562683.jpg
Thin film are produced by a sputtering phenomenon utilizing a discharge plasma of noble-gas.
Automatic gas sorption analyzerhttp://piezo.eng.u-toyama.ac.jp/wp-content/uploads/2014/12/DSCN0290.jpg
Measurement of surface area and pore size distribution of materials with micropores.
Many technological advancements have resulted from the discovery and development of materials with new properties or functions.
The Basic Material Group has been developing single crystal growth and nanoparticle fabrication techniques of new semiconductors and dielectric materials. Their physical properties and application with them have also been investigated.